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Type: 
Journal
Description: 
When a metal-oxide-semiconductor structure with a hyper-thin (≤2nm) dielectric film is subjected to constant voltage stress, after the triggering of the breakdown event, the leakage current increases progressively over time until saturation. In this work, we propose a logistic-type growth model that allows capturing the non-symmetrical features of the trajectory exhibited by the current-time characteristics. It is discussed how the resulting solution could be used to evaluate the time-to-failure under different stress conditions.
Publisher: 
Elsevier
Publication date: 
17 Jun 2005
Authors: 

F Palumbo, E Miranda, S Lombardo

Biblio References: 
Volume: 80 Pages: 166-169
Origin: 
Microelectronic engineering