3C-SiC films grown on (111) Si substrates exhibit poor crystal quality and experience wafer cracks and bowing preventing access to bulk growth. This work reports innovative Chemical Vapor Deposition (CVD) growth methodology on 4 in. Si substrates which allowed the growth of 230 mm thick layer of (111) 3C-SiC through the melting of the Si substrate in the CVD chamber and the adoption of the resulting free standing 3C-SiC for the growth of bulk (111) 3C-SiC layer under high N fluxes. From the molten KOH etching and subsequent SEM investigation it has been ascertained that with a N2 flux of 1600 sccm there is a significant reduction in the concentration of stacking faults (SFs) from (7.16 ± 0.04) × 103 cm−1 to (0.4 ± 0.3) × 103 cm−1. This reduction is consistent with the cross section m-PL response displaying steep and uniform increase in the intensity of the band-edge signal a factor 10 higher on the surface …