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Type: 
Patent
Description: 
An embodiment of an array of Geiger-mode avalanche photodiodes, wherein each photodiode is formed by a body of semiconductor material, having a first conductivity type, housing a first cathode region, of the second conductivity type, and facing a surface of the body, an anode region, having the first conductivity type and a higher doping level than the body, extending inside the body, and facing the surface laterally to the first cathode region and at a distance therefrom, and an insulation region extending through the body and ...
Publisher: 
Publication date: 
25 Jun 2013
Authors: 

Delfo Nunziato Sanfilippo, Emilio Antonio Sciacca, Piero Giorgio Fallica, Salvatore Antonio Lombardo, , Salvatore Antonio Lombardo

Biblio References: 
Origin: 
US8471293