Innovative dielectric materials are of increasing interest in several microelectronic devices. Here, an overview of different MOCVD approaches to fabricate binary and complex oxide thin films with dielectric properties is presented. The growth of three types of oxide thin films, namely Pr2O3, NiO and CaCu3Ti4O12, has been discussed. In particular the growth of Pr2O3 films has been optimized on (001) Si substrates for CMOS applications. In this case, because of the wide numbers of possible Pr-oxide phases, an accurate control of oxygen partial pressure was mandatory. NiO thin films have been grown on (0001)SiC and (0001)AlGaN/GaN wide bandgap semiconductors. The appropriate conditions for the epitaxial growth have been found in order to improve the quality of the interface. Finally, complex oxide CaCu3Ti4O12 thin films have been grown on single crystal perovskite substrates as well as on technological …