The correlation between the crystalline defectiveness and the fabrication yield and reliability of 4H-SiC in vertical PowerMOSFET is mandatory in order to fine tune the lifetime prediction for a specific mission profile. In particular, the vertical drain leakage current taken at the Electrical Wafer Sorting is usually used to overlap the electrical properties and the crystalline defects maps. This procedure ruled out any impact of the Carrot-like defects standing alone on the 4H-SiC MOSFET reliability for the product under review. Carrot-like defects may play a role in the MOSFET reliability when they are combined with other crystalline or process defects.