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Chapter 6-SiC Devices-6.2 Unipolar diodes-Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier Heights

Type: 
Journal
Description: 
Publisher: 
Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-
Publication date: 
1 Jan 2005
Authors: 

R Pierobon, G Meneghesso, E Zanoni, F Roccaforte, F La Via, V Raineri

Biblio References: 
Volume: 483485 Pages: 933-936
Origin: 
Materials Science Forum
Link: 
http://scholar.google.com/scholar?cluster=14468659917504707712&hl=en&oi=scholarr

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