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Type: 
Journal
Description: 
This letter reports on the temperature behavior of the structural and electrical properties of Ti/Al/Ni/Au contacts to AlGaN/GaN heterostructures. While Ohmic contacts formed at 750 °C showed a decreasing temperature behavior of the specific contact resistance ρC, which was explained by a thermionic field emission mechanism, an increasing trend is observed in the contacts formed at 850 °C. In this case, ρC exhibits a “metal-like” behavior, i.e., describable by a T1.8 dependence. The microstructural analysis of the interfacial region allowed to explain the results with the formation of metallic intrusions contacting directly the two dimensional electron gas.
Publisher: 
American Institute of Physics
Publication date: 
11 Nov 2013
Authors: 

Ferdinando Iucolano, Giuseppe Greco, Fabrizio Roccaforte

Biblio References: 
Volume: 103 Issue: 20 Pages: 201604
Origin: 
Applied Physics Letters