In this work, the temperature dependence of the mobility along the c axis in 4H-SiC was determined from the current voltage (I‐V) characteristics of Schottky diodes in the temperature range 80–700 K. The procedure used series resistance measurements in Schottky diodes for extracting the mobility values in the epitaxial layer. For a dopant concentration of 1.2×1016cm−3, at room temperature, a mobility value of 724cm2∕(Vs) was found, which decreased to 48.6cm2∕(Vs) at 700 K. In the temperature range 200–700 K, a dependence of the mobility as T−3 was determined.