The transfer characteristics (ID–VG) of multilayers MoS2 transistors with a SiO2/Si backgate and Ni source/drain contacts have been measured on as‐prepared devices and after annealing at different temperatures (Tann from 150 °C to 200 °C) under a positive bias ramp (VG from 0 V to +20 V). Larger Tann resulted in a reduced hysteresis of the ID–VG curves (from ∼11 V in the as‐prepared sample to ∼2.5 V after Tann at 200 °C). The field effect mobility (∼30 cm2 V–1 s–1) remained almost unchanged after the annealing. On the contrary, the subthreshold characteristics changed from the common n‐type behaviour in the as‐prepared device to the appearance of a low current hole inversion branch after annealing. This latter effect indicates a modification of the Ni/MoS2 contact that can be explained by the formation of a low density of regions with reduced Schottky barrier height (SBH) for holes embedded in a …