In the context of reliability of silicon Power Devices, we conducted a study on Power MOS Gate Trench devices. The stress tensor inside the device is characterized through experimental analysis and Finite Element calculation. A test bench is developed to investigate the impact of mechanical stress on the gate leakage current of examined devices.
7 Jul 2020
PCIM Europe digital days 2020; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management