In this paper, we explore the effects of excimer laser irradiation on heavily Aluminum (Al)-implanted silicon carbide (4H-SiC) layer. 4H-SiC layers were exposed to UV-laser radiation (308 nm, 160 ns), at different laser fluences and the effects of the laser exposure surface were evaluated from morphological, micro-structural and nano-electrical standpoints. Depending on the irradiation condition, significant near-surface changes were observed. Moreover, the electrical characteristics of the implanted layer, evaluated by means of transmission line method, gave a sheet-resistance of 1.62×104 kW/sq for the irradiated layer, linked to a poor activation of the p-type dopant and/or a low mobility of the carriers in the laser-modified 4H-SiC layer. This study can be useful for a fundamental understanding of laser annealing treatments of 4H-SiC implanted layers.