This paper reports on the formation and characterization of Ohmic contacts to n-type and p-type type 3C-SiC layers grown on silicon substrates. In particular, Ohmic contact behavior was obtained either using Ni or Ti/Al/Ni layers annealed at 950 C. The values of the specific contact resistance ρ c estimated by means of circular TLM (C-TLM) structures varied in the range~ 10-3-10-5 Ωcm 2, depending on the doping level of the 3C-SiC layer. A structural analysis performed by X-Ray Diffraction (XRD) allowed to identify the main phases formed upon annealing, ie, Ni 2 Si and Al 3 Ni 2. The morphology of the reacted contacts depended on that of the underlying substrate. The results can be useful for the development of a variety of devices on the cubic 3C-SiC polytype.