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Type: 
Journal
Description: 
In the present paper are shown the characteristcs of devices successfully employing PECVD a-SiO2 as gate dielectric. Field effect analysys on these devices were performed making use of two different methods whose equivalence has been proven.
Publisher: 
Springer Science & Business Media
Publication date: 
6 Dec 2012
Authors: 

P Foglietti, G Fortunato, L Mariucci, C Reita

Biblio References: 
Volume: 222 Pages: 27
Origin: 
Crucial Issues in Semiconductor Materials and Processing Technologies