-A A +A
Type: 
Conference
Description: 
In this work the deposition of buffer layer has been studied in order to increase the quality of the epitaxial layer and improve the performance of device. The comparison between two different thicknesses of buffer layer reveals a decrease of crystallographic defects and an improvement of electrical parameters of MOSFET device as leakage current and breakdown voltage.
Publisher: 
Trans Tech Publications Ltd
Publication date: 
1 Jan 2018
Authors: 

Nicolò Piluso, Andrea Severino, Ruggero Anzalone, Maria Ausilia di Stefano, Enzo Fontana, Marco Salanitri, Simona Lorenti, Alberto Campione, Patrick Fiorenza, Francesco La Via

Biblio References: 
Volume: 924 Pages: 84-87
Origin: 
Materials Science Forum