A possible effect of solidification velocity on activation of surface segregated Ga, In, and Al in high Ge content SiGe after UV melt laser anneal has been discussed. The experiment has shown that this effect depends on the atomic size of the dopants, implying that the solidification velocity may dominate the incorporation of the dopants into active substitutional sites. The control of the solidification velocity may play a key role for improving dopant activation over an equilibrium solid solubility limit.