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This paper reports on the impact of the surface morphology on the properties of Ti/Al Ohmic contacts fabricated on Al-implanted 4H-SiC. In particular, the surface roughness of the Al-implanted regions after annealing at 1700 C was strongly reduced by the using a protective carbon capping layer during annealing (the surface roughness decreased from 9.0 nm to 1.3 nm). In this way, also the morphology and the specific contact resistance of Ti/Al Ohmic contacts formed on the implanted regions could be improved. The electrical and morphological data were correlated with the structural properties of the reacted metal layer and of the metal/SiC interfacial region.
Trans Tech Publications Ltd
Publication date: 
1 Jan 2011

Alessia Frazzetto, Fabrizio Roccaforte, Filippo Giannazzo, Raffaella Lo Nigro, Corrado Bongiorno, Salvatore Di Franco, Ming Hung Weng, Mario Saggio, Edoardo Zanetti, Vito Raineri

Biblio References: 
Volume: 679 Pages: 413-416
Materials Science Forum