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Type: 
Journal
Description: 
The effects of the crystal quality and surface morphology on the electrical properties of MOS capacitors have been studied in devices manufactured on 3C–SiC epitaxial layers grown on silicon (1 0 0) substrate. The interface state density, which represents one of the most important parameters, has been determined through capacitance measurements. A cross-correlation between high resolution X-ray diffraction, AFM analysis and electrical conductance measurements has allowed to determine the relationship between the crystalline quality and the interface state density. A decrease of the interface state density down to about 1011 cm−2 eV−1 was observed with improving the crystalline quality.
Publisher: 
Elsevier
Publication date: 
1 Aug 2015
Authors: 

R Anzalone, S Privitera, M Camarda, A Alberti, G Mannino, P Fiorenza, S Di Franco, F La Via

Biblio References: 
Volume: 198 Pages: 14-19
Origin: 
Materials Science and Engineering: B