Contact effects in staggered SBTs with three different active layers (organic semiconductor (pentacene derivative), a-Si: H and IGZO) have been analyzed by using numerical simulations. In general, in staggered SBTs the presence of a Schottky barrier at the source severely limits the carrier injection, thus substantially reducing the on-current and, consequently, the on-off ratio, if compared to conventional TFT structures. On the other hand, depending upon barrier height and barrier lowering mechanisms, staggered SBTs ...
The Electrochemical Society
28 Jun 2013
Volume: 54 Issue: 1 Pages: 171-185