Threshold voltage ( V th ) and drain-source current ( I DS ) behaviour of nitride read only memories (NROM) were studied both in situ during irradiation or after irradiation with photons and ions. V th loss fluctuations are well explained by the same Weibull statistics regardless of the irradiation species and total dose. Results of drain current measurements in-situ during irradiation with photons and ions reveal a step-like increase of I DS with the total irradiation dose. A brief physical explanation is also provided.
1 Dec 2012
Volume: 59 Issue: 6 Pages: 3016-3020
IEEE Transactions on Nuclear Science