2006 | Page 9 | Catania HQ

Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes

Francesco La Via, Giuseppa Galvagno, Andrea Firrincieli, Salvatore Di Franco, Andrea Severino, Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Abbondanza, Ferdinando Portuese, Lucia Calcagno, Gaetano Foti

2006-01-01

Biblio references: Volume: 911

Origin: MRS Online Proceedings Library Archive

Effects of fabrication parameters on the electrical stability of gate overlapped lightly doped drain polysilicon thin-film transistors

A Bonfiglietti, A Valletta, M Rapisarda, L Mariucci, G Fortunato

2006-01-01

Biblio references: Volume: 45 Issue: 5 Pages: 4384-4388

Origin: Japanese Journal of Applied Physics-Part 1 Regular Papers and Short Notes

Low-temperature ECR-PECVD silicon dioxide as gate insulator for polycrystalline silicon thin film transistors

L Maiolo, A Pecora, G Fortunato, ND Young

2006-01-01

Biblio references: Volume: 24 Pages: 280

Origin: Journal of Vacuum Science & Technology A

Quantitative Relation between Engineering and Microscopic Parameters in Fluorocarbon Plasma

G Garozzo, C Bellecci, C Savardi, AL Magna

2006-01-01

Biblio references: Volume: 6 Pages: 81

Origin: PROCEEDINGS OF INTERNATIONAL SYMPOSIUM ON DRY PROCESS

, M. Losurdo, MM Giangregorio, G. Bruno, V. Raineri, and P. Fiorenza,‘‘Calcium Copper-Titanate Thin Film Growth: Tailoring of the Operational Conditions Through …

R Lo Nigro, RG Toro, G Malandrino, IL Fragalà

2006-01-01

Biblio references: Volume: 110 Pages: 17460-7

Origin: J. Phys. Chem. B

High growth rate process in a SiC horizontal CVD reactor using HCl

F La Via, G Galvagno, F Roccaforte, F Giannazzo, S Di Franco, A Ruggiero, R Reitano, L Calcagno, G Foti, M Mauceri, S Leone, G Pistone, F Portuese, G Abbondanza, G Abbagnale, Alessandro Veneroni, F Omarini, Laura Zamolo, Maurizio Masi, GL Valente, D Crippa

2006-01-01

Biblio references: Volume: 83 Issue: 1 Pages: 48-50

Origin: Microelectronic engineering

Analysis of transport properties of SLS polysilicon TFTs

G Fortunato, A Bonfiglietti, A Valletta, L Mariucci, M Rapisarda, SD Brotherton

2006-01-01

Biblio references: Pages: 513-518

Origin: 한국정보디스플레이학회: 학술대회논문집

Temperature dependence of the c-axis drift mobility in 4H–SiC

G Galvagno, F Roccaforte, A Ruggiero, L Calcagno, E Zanetti, M Saggio, F Portuese, F La Via

2006-01-01

Biblio references: Volume: 83 Issue: 1 Pages: 45-47

Origin: Microelectronic engineering

Defects and electrical behavior in 1 MeV Si+-ion-irradiated 4 H–Si C Schottky diodes

F Roccaforte, S Libertino, V Raineri, A Ruggiero, V Massimino, L Calcagno

2006-01-01

Biblio references: Volume: 99 Issue: 1 Pages: 013515

Origin: Journal of applied physics

Analysis of transport properties of SLS polysilicon TFTs

G Fortunato, A Bonfiglietti, A Valletta, L Mariucci, M Rapisarda, SD Brotherton

2006-01-01

Biblio references: Pages: 513-518

Origin: 한국정보디스플레이학회: 학술대회논문집

Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes

Effects of fabrication parameters on the electrical stability of gate overlapped lightly doped drain polysilicon thin-film transistors

Low-temperature ECR-PECVD silicon dioxide as gate insulator for polycrystalline silicon thin film transistors

Quantitative Relation between Engineering and Microscopic Parameters in Fluorocarbon Plasma

, M. Losurdo, MM Giangregorio, G. Bruno, V. Raineri, and P. Fiorenza,‘‘Calcium Copper-Titanate Thin Film Growth: Tailoring of the Operational Conditions Through …

High growth rate process in a SiC horizontal CVD reactor using HCl

Analysis of transport properties of SLS polysilicon TFTs

Temperature dependence of the c-axis drift mobility in 4H–SiC

Defects and electrical behavior in 1 MeV Si+-ion-irradiated 4 H–Si C Schottky diodes

Analysis of transport properties of SLS polysilicon TFTs

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