2013 | Page 8 | Catania HQ

Design of radiation-hardened rare-earth doped amplifiers through a coupled experiment/simulation approach

Sylvain Girard, Luciano Mescia, Marilena Vivona, Arnaud Laurent, Youcef Ouerdane, Claude Marcandella, Francesco Prudenzano, Aziz Boukenter, Thierry Robin, Philippe Paillet, Vincent Goiffon, Marc Gaillardin, Benoît Cadier, Emmanuel Pinsard, Marco Cannas, Roberto Boscaino

2013-02-06

Biblio references: Volume: 31 Issue: 8 Pages: 1247-1254

Origin: Journal of Lightwave Technology

Micro‐Raman analysis and finite‐element modeling of 3 C‐SiC microstructures

N Piluso, R Anzalone, M Camarda, A Severino, A La Magna, G D'Arrigo, F La Via

2013-02-01

Biblio references: Volume: 44 Issue: 2 Pages: 299-306

Origin: Journal of Raman Spectroscopy

Comparison between textured SnO 2: F and Mo contacts with the p-type layer in p–i–n hydrogenate amorphous silicon solar cells by forward bias impedance analysis

G Cannella, F Principato, M Foti, C Gerardi, S Lombardo

2013-02-01

Biblio references: Volume: 88 Pages: 175-181

Origin: Solar energy

Alkali-induced hydrogenation of epitaxial graphene by water splitting at 100 K

A Politano, G Chiarello

2013-01-28

Biblio references: Volume: 138 Issue: 4 Pages: 044703

Origin: The Journal of chemical physics

Maskless implants of 20 keV Ga+ in thin crystalline silicon on insulator

AM Mio, G D'Arrigo, RG Milazzo, E Rimini, C Spinella, L Peto, A Nadzeyka, S Bauerdick

2013-01-28

Biblio references: Volume: 113 Issue: 4 Pages: 044315

Origin: Journal of Applied Physics

Publisher's Note:“Nanoscale study of the current transport through transrotational NiSi/n-Si contacts by conductive atomic force microscopy”[Appl. Phys. Lett. 101, 261906 (2012)]

Alessandra Alberti, Filippo Giannazzo

2013-01-21

Biblio references: Volume: 102 Issue: 3 Pages: 039901-039901.1

Origin: Applied Physics Letters

Nanoscale study of the current transport through transrotational NiSi/n-Si contacts by conductive atomic force microscopy (vol 101, 261906, 2012)

Alessandra Alberti, Filippo Giannazzo

2013-01-21

Biblio references: Volume: 102 Issue: 3

Origin: APPLIED PHYSICS LETTERS

Localized Si enrichment in coherent self-assembled Ge islands grown by molecular beam epitaxy on (001) Si single crystal

M Valvo, C Bongiorno, F Giannazzo, A Terrasi

2013-01-21

Biblio references: Volume: 113 Issue: 3 Pages: 033513

Origin: Journal of Applied Physics

Stress nature investigation on heteroepitaxial 3C–SiC film on (100) Si substrates

Ruggero Anzalone, Massimo Camarda, Christopher Locke, Josè Carballo, Nicolò Piluso, Antonino La Magna, Alex A Volinsky, Stephen E Saddow, Francesco La Via

2013-01-14

Biblio references: Volume: 28 Issue: 1 Pages: 129

Origin: Journal of Materials Research

Patterned substrate with inverted silicon pyramids for 3C–SiC epitaxial growth: A comparison with conventional (001) Si substrate

Francesco La Via, Giuseppe D'Arrigo, Andrea Severino, Nicolò Piluso, Marco Mauceri, Christopher Locke, Stephen E Saddow

2013-01-14

Biblio references: Volume: 28 Issue: 1 Pages: 94

Origin: Journal of Materials Research

Design of radiation-hardened rare-earth doped amplifiers through a coupled experiment/simulation approach

Micro‐Raman analysis and finite‐element modeling of 3 C‐SiC microstructures

Comparison between textured SnO 2: F and Mo contacts with the p-type layer in p–i–n hydrogenate amorphous silicon solar cells by forward bias impedance analysis

Alkali-induced hydrogenation of epitaxial graphene by water splitting at 100 K

Maskless implants of 20 keV Ga+ in thin crystalline silicon on insulator

Publisher's Note:“Nanoscale study of the current transport through transrotational NiSi/n-Si contacts by conductive atomic force microscopy”[Appl. Phys. Lett. 101, 261906 (2012)]

Nanoscale study of the current transport through transrotational NiSi/n-Si contacts by conductive atomic force microscopy (vol 101, 261906, 2012)

Localized Si enrichment in coherent self-assembled Ge islands grown by molecular beam epitaxy on (001) Si single crystal

Stress nature investigation on heteroepitaxial 3C–SiC film on (100) Si substrates

Patterned substrate with inverted silicon pyramids for 3C–SiC epitaxial growth: A comparison with conventional (001) Si substrate

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