2013 | Page 3 | Catania HQ

Analysis of kink effect and short channel effects in fully self-aligned gate overlapped lightly doped drain polysilicon TFTs

A Valletta, L Mariucci, A Pecora, L Maiolo, SD Brotherton, G Fortunato

2013-09-01

Biblio references: Volume: 9 Issue: 9 Pages: 764-769

Origin: Journal of display technology

Microscopy study of the conductive filament in HfO 2 resistive switching memory devices

S Privitera, G Bersuker, B Butcher, A Kalantarian, S Lombardo, C Bongiorno, R Geer, DC Gilmer, PD Kirsch

2013-09-01

Biblio references: Volume: 109 Pages: 75-78

Origin: Microelectronic Engineering

Periodically rippled graphene on Ru (0 0 0 1): A template for site-selective adsorption of hydrogen dimers via water splitting and hydrogen-spillover at room temperature

Antonio Politano, Gennaro Chiarello

2013-09-01

Biblio references: Volume: 61 Pages: 412-417

Origin: Carbon

Investigation of germanium implanted with aluminum by multi-laser micro-Raman spectroscopy

A Sanson, E Napolitani, G Impellizzeri, M Giarola, D De Salvador, V Privitera, F Priolo, G Mariotto, A Carnera

2013-08-31

Biblio references: Volume: 541 Pages: 76-78

Origin: Thin Solid Films

Nanoscale structural and electrical evolution of Ta-and Ti-based contacts on AlGaN/GaN heterostructures

G Greco, F Giannazzo, F Iucolano, R Lo Nigro, F Roccaforte

2013-08-28

Biblio references: Volume: 114 Issue: 8 Pages: 083717

Origin: Journal of Applied Physics

A new position sensitive anode for plasmas diagnostic

R Grasso, S Tudisco, A Anzalone, F Musumeci, A Scordino, A Spitaleri, R Anzalone, G D’Arrigo, F LaVia

2013-08-21

Biblio references: Volume: 720 Pages: 122-124

Origin: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

The nature of free OH stretching in water adsorbed on carbon nanosystems

Antonio Politano, Gennaro Chiarello

2013-08-14

Biblio references: Volume: 139 Issue: 6 Pages: 064704

Origin: The Journal of chemical physics

Principle of operation and modeling of source-gated transistors

A Valletta, L Mariucci, M Rapisarda, G Fortunato

2013-08-14

Biblio references: Volume: 114 Issue: 6 Pages: 064501

Origin: Journal of Applied Physics

Impact of annealing induced structural relaxation on the electrical properties and the crystallization kinetics of amorphous GeTe films

S Privitera, AM Mio, G D'Arrigo, E Carria, E Rimini

2013-08-12

Biblio references: Volume: 103 Issue: 7 Pages: 071901

Origin: Applied Physics Letters

Direct growth of quasi-free-standing epitaxial graphene on nonpolar SiC surfaces

M Ostler, I Deretzis, S Mammadov, F Giannazzo, G Nicotra, C Spinella, Th Seyller, A La Magna

2013-08-07

Biblio references: Volume: 88 Issue: 8 Pages: 085408

Origin: Physical Review B

Analysis of kink effect and short channel effects in fully self-aligned gate overlapped lightly doped drain polysilicon TFTs

Microscopy study of the conductive filament in HfO 2 resistive switching memory devices

Periodically rippled graphene on Ru (0 0 0 1): A template for site-selective adsorption of hydrogen dimers via water splitting and hydrogen-spillover at room temperature

Investigation of germanium implanted with aluminum by multi-laser micro-Raman spectroscopy

Nanoscale structural and electrical evolution of Ta-and Ti-based contacts on AlGaN/GaN heterostructures

A new position sensitive anode for plasmas diagnostic

The nature of free OH stretching in water adsorbed on carbon nanosystems

Principle of operation and modeling of source-gated transistors

Impact of annealing induced structural relaxation on the electrical properties and the crystallization kinetics of amorphous GeTe films

Direct growth of quasi-free-standing epitaxial graphene on nonpolar SiC surfaces

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