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Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition

Raffaella Lo Nigro, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

2016-10-30

Biblio references: Volume: 617 Pages: 138-142

Origin: Thin Solid Films

Nanoscale Study of the Tarnishing Process in Electron Beam Lithography-Fabricated Silver Nanoparticles for Plasmonic Applications

Mario Scuderi, Marco Esposito, Francesco Todisco, Daniela Simeone, Iolena Tarantini, Luisa De Marco, Milena De Giorgi, Giuseppe Nicotra, Luigi Carbone, Daniele Sanvitto, Adriana Passaseo, Giuseppe Gigli, Massimo Cuscunà

2016-10-27

Biblio references: Volume: 120 Issue: 42 Pages: 24314-24323

Origin: The Journal of Physical Chemistry C

Investigation of Gate Direct-Current and Fluctuations in Organic p-Type Thin-Film Transistors

Gino Giusi, Graziella Scandurra, Sabrina Calvi, Guglielmo Fortunato, Matteo Rapisarda, Luigi Mariucci, Carmine Ciofi

2016-10-19

Biblio references: Volume: 37 Issue: 12 Pages: 1625-1627

Origin: IEEE Electron Device Letters

Ohmic contacts to Gallium Nitride materials

Giuseppe Greco, Ferdinando Iucolano, Fabrizio Roccaforte

2016-10-15

Biblio references: Volume: 383 Pages: 324-345

Origin: Applied Surface Science

Towards a high performing UV-A sensor based on Silicon Carbide and hydrogenated Silicon Nitride absorbing layers

M Mazzillo, Antonella Sciuto, Giovanni Mannino, L Renna, N Costa, P Badalà

2016-10-13

Biblio references: Volume: 11 Issue: 10 Pages: P10010

Origin: Journal of Instrumentation

Novel near-infrared emission from crystal defects in MoS2 multilayer flakes

F Fabbri, E Rotunno, E Cinquanta, D Campi, E Bonnini, D Kaplan, L Lazzarini, M Bernasconi, C Ferrari, M Longo, G Nicotra, A Molle, V Swaminathan, G Salviati

2016-10-04

Biblio references: Volume: 7 Pages: 13044

Origin: Nature communications

Insight on a novel layered semiconductors: CuTlS and CuTlSe

Ziya S Aliev, Fco Javier Zúñiga, Yury M Koroteev, Tomasz Breczewski, Nizamaddin B Babanly, Imamaddin R Amiraslanov, Antonio Politano, Gotzon Madariaga, Mahammad B Babanly, Evgueni V Chulkov

2016-10-01

Biblio references: Volume: 242 Pages: 1-7

Origin: Journal of Solid State Chemistry

Graphene integration with nitride semiconductors for high power and high frequency electronics

F Giannazzo, G Fisichella, G Greco, A La Magna, F Roccaforte, Béla Pécz, R Yakimova, R Dagher, A Michon, Y Cordier

2016-10-01

Biblio references:

Origin: physica status solidi (a)

Substrate and atmosphere influence on oxygen p-doped graphene

Aurora Piazza, Filippo Giannazzo, Gianpiero Buscarino, Gabriele Fisichella, Antonino La Magna, Fabrizio Roccaforte, Marco Cannas, Franco Mario Gelardi, Bruno Pignataro, Michelangelo Scopelliti, Simonpietro Agnello

2016-10-01

Biblio references: Volume: 107 Pages: 696-704

Origin: Carbon

Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices

Patrick Fiorenza, Giuseppe Greco, Marilena Vivona, Filippo Giannazzo, Salvatore Di Franco, Alessia Frazzetto, Alfio Guarnera, Mario Saggio, Ferdinando Iucolano, Alfonso Patti, Fabrizio Roccaforte

2016-10-01

Biblio references:

Origin: physica status solidi (a)

Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition

Nanoscale Study of the Tarnishing Process in Electron Beam Lithography-Fabricated Silver Nanoparticles for Plasmonic Applications

Investigation of Gate Direct-Current and Fluctuations in Organic p-Type Thin-Film Transistors

Ohmic contacts to Gallium Nitride materials

Towards a high performing UV-A sensor based on Silicon Carbide and hydrogenated Silicon Nitride absorbing layers

Novel near-infrared emission from crystal defects in MoS2 multilayer flakes

Insight on a novel layered semiconductors: CuTlS and CuTlSe

Graphene integration with nitride semiconductors for high power and high frequency electronics

Substrate and atmosphere influence on oxygen p-doped graphene

Electrical characterization of trapping phenomena at SiO2/SiC and SiO2/GaN in MOS‐based devices

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