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Engineering interfacial structure in “Giant” PbS/CdS quantum dots for photoelectrochemical solar energy conversion

Lei Jin, Gianluca Sirigu, Xin Tong, Andrea Camellini, Andrea Parisini, Giuseppe Nicotra, Corrado Spinella, Haiguang Zhao, Shuhui Sun, Vittorio Morandi, Margherita Zavelani-Rossi, Federico Rosei, Alberto Vomiero

2016-12-01

Biblio references: Volume: 30 Pages: 531-541

Origin: Nano Energy

Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition

T Sledziewski, M Vivona, K Alassaad, Pawel Kwasnicki, R Arvinte, S Beljakowa, HB Weber, F Giannazzo, Herve Peyre, V Souliere, T Chassagne, M Zielinski, Sandrine Juillaguet, G Ferro, F Roccaforte, M Krieger

2016-11-28

Biblio references: Volume: 120 Issue: 20 Pages: 205701

Origin: Journal of Applied Physics

Effects of VLS and VS mechanisms during shell growth in GaAs-AlGaAs core-shell nanowires investigated by transmission electron microscopy

Mario Scuderi, Paola Prete, Nico Lovergine, Corrado Spinella, Giuseppe Nicotra

2016-11-22

Biblio references:

Origin: Materials Science in Semiconductor Processing

Laser annealing in Si and Ge: Anomalous physical aspects and modeling approaches

SF Lombardo, S Boninelli, F Cristiano, G Fisicaro, G Fortunato, MG Grimaldi, G Impellizzeri, M Italia, A Marino, R Milazzo, E Napolitani, V Privitera, A La Magna

2016-11-07

Biblio references:

Origin: Materials Science in Semiconductor Processing

Low temperature atomic layer deposition of ZnO: Applications in photocatalysis

Alessandro Di Mauro, Maria Cantarella, Giuseppe Nicotra, Vittorio Privitera, Giuliana Impellizzeri

2016-11-05

Biblio references: Volume: 196 Pages: 68-76

Origin: Applied Catalysis B: Environmental

Effect of temperature–bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors

F Giannazzo, G Fisichella, A Piazza, S Di Franco, G Greco, S Agnello, F Roccaforte

2016-11-01

Biblio references: Volume: 10 Issue: 11 Pages: 797-801

Origin: physica status solidi (RRL)–Rapid Research Letters

Short, long and spatial dynamics of informal employment

Paolo Di Caro, Giuseppe Nicotra

2016-11-01

Biblio references: Volume: 50 Issue: 11 Pages: 1804-1818

Origin: Regional Studies

Ti/Al‐based contacts to p‐type SiC and GaN for power device applications

F Roccaforte, M Vivona, G Greco, R Lo Nigro, F Giannazzo, S Di Franco, C Bongiorno, F Iucolano, A Frazzetto, S Rascunà, A Patti, M Saggio

2016-11-01

Biblio references:

Origin: physica status solidi (a)

Electrical compensation via vacancy–donor complexes in arsenic-implanted and laser-annealed germanium

T Kalliovaara, Jonatan Slotte, Ilja Makkonen, J Kujala, Filip Tuomisto, R Milazzo, G Impellizzeri, G Fortunato, E Napolitani

2016-10-31

Biblio references: Volume: 109 Issue: 18 Pages: 182107

Origin: Applied Physics Letters

Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition

Raffaella Lo Nigro, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte

2016-10-30

Biblio references: Volume: 617 Pages: 138-142

Origin: Thin Solid Films

Engineering interfacial structure in “Giant” PbS/CdS quantum dots for photoelectrochemical solar energy conversion

Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition

Effects of VLS and VS mechanisms during shell growth in GaAs-AlGaAs core-shell nanowires investigated by transmission electron microscopy

Laser annealing in Si and Ge: Anomalous physical aspects and modeling approaches

Low temperature atomic layer deposition of ZnO: Applications in photocatalysis

Effect of temperature–bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors

Short, long and spatial dynamics of informal employment

Ti/Al‐based contacts to p‐type SiC and GaN for power device applications

Electrical compensation via vacancy–donor complexes in arsenic-implanted and laser-annealed germanium

Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition

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