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Asymmetric fingered TFT structure: a new architecture for kink effect and off-current suppression and improved stability

G Fortunato, M Cuscuna, L Mariucci, A Bonfiglietti, A Pecora, A Valletta

2006-01-01

Biblio references: Volume: 48 Issue: 91 Pages: S64-S71

Origin: Journal of the Korean Physical Society

Active-Matrix Liquid-Crystal Displays-TFT Technology--Characterization-Modelling Velocity Saturation Effects in Polysilicon Thin-Film Transistors

A Valletta, P Gaucci, L Mariucci, G Fortunato

2006-01-01

Biblio references: Volume: 45 Issue: 5 Pages: 4374-4377

Origin: Japanese Journal of Applied Physics-Part 1 Regular Papers and Short Notes

Part 1-Chapter 2-SiC Epitaxial Growth-2.1 Homoepitaxial Growth-Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical Characterization

F La Galvagno, G Via, A Roccaforte, F Firrincieli, S Di Ruggiero, A Franco, L Foti, G Calcagno, M Leone, S Mauceri, G Abbondanza, G Pistone, F Abagnale, G Portuese, GL Crippa, D Valente

2006-01-01

Biblio references: Volume: 527529 Pages: 199-202

Origin: Materials Science Forum

Low-temperature ECR-PECVD silicon dioxide as gate insulator for polycrystalline silicon thin film transistors

L Maiolo, A Pecora, G Fortunato, ND Young

2006-01-01

Biblio references: Volume: 24 Pages: 280

Origin: Journal of Vacuum Science & Technology A

, M. Losurdo, MM Giangregorio, G. Bruno, V. Raineri, and P. Fiorenza,‘‘Calcium Copper-Titanate Thin Film Growth: Tailoring of the Operational Conditions Through …

R Lo Nigro, RG Toro, G Malandrino, IL Fragalà

2006-01-01

Biblio references: Volume: 110 Pages: 17460-7

Origin: J. Phys. Chem. B

Papers from the Eighth International Workshop on the Fabrication, Characterization, and Modeling of Ultra-shallow Doping Profiles in Semiconductors-Modeling Dopants and Defects-Size effects on

F Giannazzo, V Raineri, E Bruno, S Mirabella, G Impellizzeri, F Priolo, E Napolitani

2006-01-01

Biblio references: Volume: 24 Issue: 1 Pages: 468-472

Origin: Journal of Vacuum Science and Technology-Section B

Perspectives and advantages of the use of excimer laser annealing for MOS technology

V Privitera, P Alippi, M Camalleri, M Cuscuna, G Fortunato, A La Magna, G La Rosa, A Magri, L Mariucci, E Monakhov, D Salinas, F Simon, C Spinella, BG Svensson

2006-01-01

Biblio references: Volume: 29 Issue: 3 Pages: 369-379

Origin: Il nuovo cimento C

Analysis of transport properties of SLS polysilicon TFTs

G Fortunato, A Bonfiglietti, A Valletta, L Mariucci, M Rapisarda, SD Brotherton

2006-01-01

Biblio references: Pages: 513-518

Origin: 한국정보디스플레이학회: 학술대회논문집

Defects and electrical behavior in 1 MeV Si+-ion-irradiated 4 H–Si C Schottky diodes

F Roccaforte, S Libertino, V Raineri, A Ruggiero, V Massimino, L Calcagno

2006-01-01

Biblio references: Volume: 99 Issue: 1 Pages: 013515

Origin: Journal of applied physics

High Growth Rate Process in a SiC Horizontal Reactor with HCl Addition: Structural and Electrical Characterization

Francesco La Via, Giuseppa Galvagno, Andrea Firrincieli, Salvatore Di Franco, Andrea Severino, Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Abbondanza, Ferdinando Portuese, Lucia Calcagno, Gaetano Foti

2006-01-01

Biblio references: Volume: 911

Origin: MRS Online Proceedings Library Archive

Asymmetric fingered TFT structure: a new architecture for kink effect and off-current suppression and improved stability

Active-Matrix Liquid-Crystal Displays-TFT Technology--Characterization-Modelling Velocity Saturation Effects in Polysilicon Thin-Film Transistors

Part 1-Chapter 2-SiC Epitaxial Growth-2.1 Homoepitaxial Growth-Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical Characterization

Low-temperature ECR-PECVD silicon dioxide as gate insulator for polycrystalline silicon thin film transistors

, M. Losurdo, MM Giangregorio, G. Bruno, V. Raineri, and P. Fiorenza,‘‘Calcium Copper-Titanate Thin Film Growth: Tailoring of the Operational Conditions Through …

Papers from the Eighth International Workshop on the Fabrication, Characterization, and Modeling of Ultra-shallow Doping Profiles in Semiconductors-Modeling Dopants and Defects-Size effects on

Perspectives and advantages of the use of excimer laser annealing for MOS technology

Analysis of transport properties of SLS polysilicon TFTs

Defects and electrical behavior in 1 MeV Si+-ion-irradiated 4 H–Si C Schottky diodes

High Growth Rate Process in a SiC Horizontal Reactor with HCl Addition: Structural and Electrical Characterization

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