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Origin: Applied and Industrial Mathematics in Italy II: Selected Contributions from the 8th SIMAI Conference: Baia Samuele (Regusa), Italy, 22-26 May 2006

Chapter 2-SiC Epitaxy-2.1 Homoepitaxial Growth-Optimisation of Epitaxial Layer Growth with HCI Addition by Optical and Electrical Characterization

L Calcagno, G Izzo, G Litrico, G Galvagno, A Firrincieli, S Di Franco, M Mauceri, S Leone, G Pistone, G Condorelli, F Portuese, G Abbondanza, G Foti, F La Via

2007-01-01

Biblio references: Volume: 556557 Pages: 137-140

Origin: Materials Science Forum

Effect of surrounding environment on atomic structure and equilibrium shape of growing nanocrystals&58; gold in/on SiO&60; sub&62; 2&60;/sub&62

C Bongiorno, F Giannazzo, F Roccaforte, V Raineri, F Ruffino, MG Grimaldi

2007-01-01

Biblio references: Volume: 2 Issue: 5 Pages: 240-247

Origin: Nanoscale Research Letters

Polysilicon Thin Film Transistors on spin-coated Polyimide layer for flexible electronics

A Pecora, L Maiolo, M Cuscuna, D Simeone, A Minotti, L Mariucci, G Fortunato

2007-01-01

Biblio references: Pages: 261-264

Origin: 한국정보디스플레이학회: 학술대회논문집

Chapter 3-SiC Characterization and Theory-3.3 Defects-Conductive Atomic Force Microscopy Studies on the Reliability of Thermally Oxidized SiO2/4H-SiC

P Fiorenza, R Lo Nigro, V Raineri, D Salinas

2007-01-01

Biblio references: Volume: 556557 Pages: 501-504

Origin: Materials Science Forum

The influence of substrate on the properties of Er 2 O 3 films grown by magnetron sputtering

M Miritello, R Lo Savio, F Iacona, G Franzo, C Bongiorno, A Irrera, F Priolo

2006-12-31

Biblio references: Volume: 121 Issue: 2 Pages: 233-237

Origin: Journal of luminescence

High efficiency 4H-SiC Schottky UV-photodiodes using self-aligned semitransparent contacts

EXPRESSION OF Ca^ 2^+ INDEPENDENT AND Ca^ 2^+ DEPENDENT PHOSPHOLIPASES A~ 2~+ AND CYCLOOXYGENASES IN HUMAN MELANOCYTES AND MALIGNANT MELANOMA CELL LINES

A neural network approach to event-by-event cosmic ray primary mass idenfication

Synaptic plasticity modulates the spontaneous recovery of locomotion after spinal cord hemisection

ELECTRONIC TRANSPORT CALCULATION OF FINITE

Chapter 2-SiC Epitaxy-2.1 Homoepitaxial Growth-Optimisation of Epitaxial Layer Growth with HCI Addition by Optical and Electrical Characterization

Effect of surrounding environment on atomic structure and equilibrium shape of growing nanocrystals&58; gold in/on SiO&60; sub&62; 2&60;/sub&62

Polysilicon Thin Film Transistors on spin-coated Polyimide layer for flexible electronics

Chapter 3-SiC Characterization and Theory-3.3 Defects-Conductive Atomic Force Microscopy Studies on the Reliability of Thermally Oxidized SiO2/4H-SiC

The influence of substrate on the properties of Er 2 O 3 films grown by magnetron sputtering

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