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Type: 
Journal
Description: 
We developed a non self-aligned poly-silicon TFTs fabrication process at two different temperatures on spin-coated polyimide layer above Si-wafer. After TFTs fabrication, the polyimide layer was mechanically released from the Si-wafer and the devices characteristics were compared. In addition self-heating and hot-carrier induced instabilities were analysed.
Publisher: 
The Korean Infomation Display Society
Publication date: 
1 Jan 2007
Authors: 

A Pecora, L Maiolo, M Cuscuna, D Simeone, A Minotti, L Mariucci, G Fortunato

Biblio References: 
Pages: 261-264
Origin: 
한국정보디스플레이학회: 학술대회논문집