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Type: 
Conference
Description: 
In this paper we discuss the laser annealing crystallization of hydrogenated a-Si film deposited at 250degC by means of PECVD technique. Abrupt out-diffusion of hydrogen damages the deposited layers during single shot high energy density laser annealing. On the contrary, a multisteps laser annealing approach, from low to high energy density, allows us to achieve good poly-Si film, without any H-related defect.
Publisher: 
IEEE
Publication date: 
2 Oct 2007
Authors: 

F Mangano, L Caristia, N Costa, M Camalleri, S Ravesi, S Scalese, S Bagiante, V Privitera

Biblio References: 
Pages: 271-274
Origin: 
2007 15th International Conference on Advanced Thermal Processing of Semiconductors