Multilayers of Ge quantum dots (QDs, 3 nm in diameter) embedded in SiO2, separated by SiO2 barrier layer (3, 9, or 20 nm thick), have been synthesized by sputter deposition and characterized by transmission electron microscopy and light absorption spectroscopy. Quantum confinement affects the optical bandgap energy (1.9 eV for QDs, 0.8 eV for bulk Ge); moreover, the absorption probability greatly depends on the QD-QD distance. A strong electronic coupling among Ge QDs is evidenced, with a significant increase of the light absorption efficiency when the QD-QD distance is reduced. These data unveil promising aspects for light harvesting with nanostructures.