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Type: 
Patent
Description: 
A photodiode structure is based on the use of a double junction sensitive to different wavelength bands based on a magnitude of a reverse bias applied to the photodiode. The monolithic integration of a sensor with double functionality in a single chip allows realization of a low cost ultra-compact sensing element in a single packaging useful in many applications which require simultaneous or spatially synchronized detection of optical photons in different spectral regions.
Publisher: 
Publication date: 
4 Apr 2017
Authors: 

Massimo Cataldo MAZZILLO, Antonella SCIUTO, Dario Sutera

Biblio References: 
Origin: 
US20170207360