Conductive atomic force microscopy (CAFM) is employed to investigate the current injection from a nanometric contact (a Pt coated tip) to the surface of MoS 2 thin films. The analysis of local current-voltage characteristics on a large array of tip positions provides high spatial resolution information on the lateral homogeneity of the tip/MoS 2 Schottky barrier Φ B and ideality factor n, and on the local resistivity ρ loc of the MoS 2 region under the tip. Here, Φ B= 300±24 meV, n= 1.60±0.23, and ρ loc= 2.99±0.68 Ω cm are calculated from the distributions of locally measured values. A linear correlation is found between the ρ loc and Φ B values at each tip position, indicating a similar origin of the ρ loc and Φ B inhomogeneities. These findings are compared with recent literature results on the role of sulfur vacancy clusters on the MoS 2 surface as preferential paths for current injection from metal contacts. Furthermore, their …