The formation of ohmic contacts by laser annealing approach is of great importance for SiC power devices, since it allows their fabrication on thin substrates, that is of crucial significance to reduce power dissipation. Ni silicide reaction under UV laser irradiation has been studied in detail with particular focus on single pulse approach, in order to describe the early stage of reaction process. The use of a multi pulse approach, for the formation of Ni silicide-based ohmic contacts by means of excimer laser annealing, has been investigated in this work. The reaction process has been characterized, as a function of number of pulses, by means of X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM) analysis. Laser process simulations, formulated in the framework of phase field theory, have been performed in order to predict the evolution of material during reaction under annealing. Simulations show that …