Type:
Journal
Description:
Dielectric breakdown (BD) of nFETs with TiN metal gates and HfO2/interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for extraction of the PBD time and its dependence on gate voltage are reported.
Publisher:
Pergamon
Publication date:
1 Nov 2008
Biblio References:
Volume: 48 Issue: 11-12 Pages: 1759-1764
Origin:
Microelectronics Reliability