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Type: 
Conference
Description: 
This paper reports on the electrical characteristics of silicon photomultipliers (SiPM) with optimized optical trench technology. The SiPM arrays were characterized from single pixels up to the full 64×64 pixel device. The data clearly show a perfect scaling of the dark current with the pixel number, thus indicating an almost ideal insulation among the pixels in the whole voltage operating range.
Publisher: 
IEEE
Publication date: 
12 Sep 2011
Authors: 

R Pagano, D Corso, S Lombardo, S Libertino, G Valvo, D Sanfilippo, A Russo, PG Fallica, A Pappalardo, P Finocchiaro

Biblio References: 
Pages: 183-186
Origin: 
2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)