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Type: 
Conference
Description: 
This work reports on the physical and electrical characterization of the oxide/semiconductor interface in MOS capacitors with the SiO 2 layer deposited by a high temperature process from dichlorosilane and nitrogen-based vapor precursors and subjected to a post deposition annealing process in N 2 O. Low interface state density (D it≈ 9.0× 10 11 cm− 2 eV− 1) was found at 0.2 eV from EC, which is comparable to the values typically obtained in other lower temperature deposited oxides (eg, TEOS). A barrier ...
Publisher: 
IEEE
Publication date: 
25 Sep 2016
Authors: 

Marilena Vivona, Patrick Fiorenza, Ferdinando Iucolano, Andrea Severino, Simona Lorenti, Fabrizio Roccaforte

Biblio References: 
Pages: 1-1
Origin: 
Silicon Carbide & Related Materials (ECSCRM), European Conference on