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We present a compact model of transport through a random distribution of interacting quantum dots embedded in a dielectric matrix. The model is based on a network of interconnected tunnel junctions sandwiched between two electrodes, resulting in a system of nonlinear differential equations which is numerically solved for a given time-dependent voltage applied to the gate. The capacitance matrix, electron/hole tunneling currents and the effective area of conduction between quantum dots are calculated at each integration step. The transport properties obtained from the model are successfully validated against experimental data for a silicon nanocrystal basic MOS cell, showing its potential applicability to non-volatile memories. In addition, through a simple rate equation, the calculated charge flux tunneling or impacting the nanocrystals is converted into electroluminescence. In this regard, we discuss the origin of …
IOP Publishing
Publication date: 
24 Mar 2009

Josep Carreras, O Jambois, S Lombardo, B Garrido

Biblio References: 
Volume: 20 Issue: 15 Pages: 155201