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Type: 
Patent
Description: 
A semiconductive substrate that is suitable for realising electronic and/or optoelectronic devices that include at least one substrate, in particular of single crystal silicon, and an overlying layer of single crystal silicon. Advantageously, the semiconductive substrate comprises at least one functional coupling layer suitable for reducing the defects linked to the differences in the materials used. The functional coupling layer can comprise a corrugated portion made in the layer of single crystal silicon and suitable for reducing the ...
Publisher: 
Publication date: 
18 Nov 2014
Authors: 

Giuseppe Alessio Maria D'arrigo, Francesco La Via, , Francesco La Via

Biblio References: 
Origin: 
US8890103