The continuous demand for electronic devices operating at increasing current and power levels, as well as at high temperatures and in harsh environments, has driven research into wide-band gap (WBG) semiconductors over the last three decades. This is because, due to their outstanding physical properties, WBG semiconductors can overcome the physical and electrical limits imposed by the use of conventional silicon devices [1]. Among WBG materials, the 4H hexagonal polytype of silicon carbide (4H-SiC) is the most promising for use in power electronics applications in the medium-to-high voltage range (600–3000 V)[2, 3]. However, to achieve optimized performances with these 4H-SiC devices, a full understanding of the fundamental material properties, processing technologies, and carrier transport mechanisms associated with this semiconductor material is required. In this sense, there is still plenty of room …