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SiO2/4H-SiC interfacial chemistry as origin of the threshold voltage instability in power MOSFETs

Type: 
Conference
Description: 
Publisher: 
IEEE
Publication date: 
27 Mar 2022
Authors: 

Patrick Fiorenza, C Bongiorno, A Messina, Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte

Biblio References: 
Pages: 3B. 3-1-3B. 3-5
Origin: 
2022 IEEE International Reliability Physics Symposium (IRPS)
Link: 
https://scholar.google.it/citations?view_op=view_citation&hl=en&citation_for_vie…

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