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SiO2/4H-SiC interfacial chemistry as origin of the threshold voltage instability in power MOSFETs
Type:
Conference
Description:
Publisher:
IEEE
Publication date:
27 Mar 2022
Authors:
Patrick Fiorenza, C Bongiorno, A Messina, Mario Saggio, Filippo Giannazzo, Fabrizio Roccaforte
Biblio References:
Pages: 3B. 3-1-3B. 3-5
Origin:
2022 IEEE International Reliability Physics Symposium (IRPS)
Link:
https://scholar.google.it/citations?view_op=view_citation&hl=en&citation_for_vie…
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