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Type: 
Conference
Description: 
The stacking faults (SFs) in 3C-SiC epitaxially grown on ridges deeply etched into Si (001) substrates offcut towards [110] were quantitatively analyzed by electron microscopy and X-ray diffraction. A significant reduction of SF density with respect to planar material was observed for the {111} planes parallel to the ridges. The highest SF density was found in the (-1-11) plane. A previously observed defect was identified as twins by electron backscatter diffraction.
Publisher: 
Trans Tech Publications Ltd
Publication date: 
1 Jan 2016
Authors: 

Mojmír Meduňa, Thomas Kreiliger, Ivan Prieto, Marco Mauceri, Marco Puglisi, Fulvio Mancarella, Francesco La Via, Danilo Crippa, Leo Miglio, Hans von Känel

Biblio References: 
Volume: 858 Pages: 147-150
Origin: 
Materials Science Forum