The cubic polytype of silicon carbide (3C-SiC) has attracted particular interest since the early days of research and development in the field of SiC technology. Knippenberg [1] elaborated already in the year 1963 in detail stability criteria for the growth of various SiC polytypes and presented process conditions that favorably lead to the formation of 3C-SiC. Later, this work was further elaborated by Fissel [2] who presented in the year 2000 a comprehensive study on thermodynamic considerations of the epitaxial growth of SiC. From the point of view of electronic device applications, the cubic polytype of SiC was considered in the 1980s and 1990s because of the greater electron mobility compared to the hexagonal counterparts, ie 4H-SiC and 6H-SiC (Table 5.1).From a crystal growth point of view, the process development progressed much faster for the hexagonal polytypes 6H-SiC and 4H-SiC which is the main reason that the 4H-SiC is being applied as state of the art in Schottky-junction diodes (SJD) as well as in power switches based on metal oxide semiconductor field-effect transistors (MOSFET). The interest in the cubic polytype, however, remained high throughout the years. The 4H-SiC metal-oxide-semiconductor (MOS) interface exhibits a high defect density in the upper band gap of 4H-SiC and a limited long-term stability. Due to the smaller electronic band gap of the cubic polytype, those interface-related electron traps are mainly located in the conduction band of 3C-SiC and, hence, enable better device performance in the mid-voltage regime of 300–800 V devices [14–16]. Up to date, the major barrier for the application of 3C-SiC in …