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Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200 {\deg} C

Type: 
Journal
Description: 
The gate oxide lifetime in 4H-SiC power MOSFETs is typically assessed at fixed and constant gate bias stress, monitoring the time-dependent dielectric breakdown (TDDB).
Publisher: 
Publication date: 
25 Oct 2024
Authors: 

P Fiorenza, F Cordiano, SM Alessandrino, A Russo, E Zanetti, M Saggio, C Bongiorno, F Giannazzo, F Roccaforte

Biblio References: 
Origin: 
arXiv preprint arXiv:2410.19545
Link: 
https://arxiv.org/pdf/2410.19545

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