Type:
Patent
Description:
A process is described for integrating two closely spaced thin films without deposition of the films through deep vias. The films may be integrated on a wafer and patterned to form a microscale heat-trimmable resistor. A thin-film heating element may be formed proximal to a thin-film resistive element, and heat generated by the thin-film heater can be used to permanently trim a resistance value of the thin-film resistive element. Deposition of the thin films over steep or abrupt topography is minimized by using a process in which the thin ...
Publisher:
Publication date:
15 Oct 2013
Biblio References:
Origin:
US8558654