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Type: 
Journal
Description: 
This paper reports the electrooptical characteristics of ultraviolet light-sensitive 4H-SiC p + -n junction photodiodes obtained by aluminium (Al) ion implantation on low-doped n-type epilayers. A low dark current density ( 10 3 were demonstrated. The absence of optically active defects and nitrogen donor-aluminum acceptor pair recombination centers was monitored by optical measurements in the visible range.
Publisher: 
IEEE
Publication date: 
16 Jun 2015
Authors: 

A Sciuto, M Mazzillo, S Di Franco, F Roccaforte, G D'Arrigo

Biblio References: 
Volume: 7 Issue: 3 Pages: 1-6
Origin: 
IEEE Photonics Journal