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Devices for Classic and Quantum Information Storage and Processing

Phase Change Memory Nano-Fabrication and Elements Segregation Study

Giuseppe D'Arrigo, CNR-IMM Catania

 

The working principle of a Phase Change Memory (PCM) cell exploits the reversible...

Characterization of materials for Phase Change Memories and ReRam

Phase change materials

Phase change materials are interesting candidates for emerging applications in memories, photonics, displays, ovonic threshold switch selectors and non von Neumann...

Advanced methods for nanoelectronics processing

The demand for low voltage, low power, high performance and increased functionalities has issued severe challenges for the integration progress of nanoelectronic devices so new disruptive...

Study of Dielectric Breakdown Mechanism in CMOS in dielectrics for FEOL, MEOL, and BEOL

 

Salvatore Lombardo, CNR-IMM, Catania

 

The definition of the basic physical mechanisms of the dielectric breakdown (BD) phenomenon is still an open area of research. In...