2005 | Page 2 | Catania HQ

Alessandra Alberti, Corrado Bongiorno, Brunella Cafra, Giovanni Mannino, Emanuele Rimini, Till Metzger, Cristian Mocuta, Thorsten Kammler, Thomas Feudel

2005-10-01

Biblio references: Volume: 61 Issue: 5 Pages: 486-491

Origin: Acta Crystallographica Section B: Structural Science

Full characterization of the loading of a magneto–optical trap from an alkali metal dispenser

S Bartalini, I Herrera, L Consolino, L Pappalardo, N Marino, G D'Arrigo, FS Cataliotti

2005-10-01

Biblio references: Volume: 36 Issue: 1 Pages: 101-104

Origin: The European Physical Journal D-Atomic, Molecular, Optical and Plasma Physics

PZT thin film deposition on Si wafers and optical fibers prepared by reactive DC pulsed magnetron sputtering from a single metallic target

R Thapliyal, P Schwaller, M Amberg, FJ Haug, G Fortunato, D Hegemann, HJ Hug, A Fischer

2005-10-01

Biblio references: Volume: 200 Issue: 1-4 Pages: 1051-1056

Origin: Surface and Coatings Technology

B activation enhancement in submicron confined implants in Si

E Bruno, S Mirabella, G Impellizzeri, F Priolo, F Giannazzo, V Raineri, E Napolitani

2005-09-26

Biblio references: Volume: 87 Issue: 13 Pages: 133110

Origin: Applied Physics Letters

The effect of excimer laser pretreatment on diffusion and activation of boron implanted in silicon

Investigation of SiO 2/HfO 2 gate stacks for application to non-volatile memory devices

Room-temperature single-electron effects in silicon nanocrystal memories

Thermal evolution and photoluminescence properties of nanometric Si layers

Experimental evidences of carrier distribution and behavior in frequency in a BMFET modulator

Drift mobility in 4H-SiC Schottky diodes

Pseudoepitaxial transrotational structures in 14 nm-thick NiSi layers on [001] silicon

Full characterization of the loading of a magneto–optical trap from an alkali metal dispenser

PZT thin film deposition on Si wafers and optical fibers prepared by reactive DC pulsed magnetron sputtering from a single metallic target

B activation enhancement in submicron confined implants in Si

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