The International Conference on Silicon Carbide and Related Materials (ICSCRM) is the most important technical conference series in the world for electronics devices technology based on silicon carbide (SiC) and related materials. A series of ICSCRM started at Washington, D.C. in 1987. After five conferences in USA, ICSCRM has been held every two years in USA, Europe, and Japan under the International Steering Committee. The last editions were held in Nürnberg, Germany (2009), Cleveland, USA (2011) and Miyazaki, Japan (2013).

The 16^th International Conference on Silicon Carbide and Related Materials (ICSCRM2015) was held in Giardini Naxos, Sicily (Italy), from October 4^th to October 9^th, 2015, and organized by CNR-IMM. The conference provided a scientific forum on the wide band-gap semiconductor silicon carbide (SiC) for 642 participants from 28 countries.

During the conference, 357 works have been presented: 24 invited, 98 oral and 235 posters. These presentations covered most of the current research activities running on the wide band-gap semiconductor silicon carbide SiC and related materials, from fundamental material issues to power electronics applications.

The conference proceedings have been published on a dedicated volume of Material Science Forum.