2012 | Catania HQ

Electrical characterisation of a-Si: H (n)/c-Si (p) heterostructures for solar cell applications

M Mikolášek, M Nemec, J Kováč, G Mannino, C Gerardi, C Tringali, L Harmatha, S Lombardo

2012-11-11

Biblio references: Pages: 115-118

Origin: The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems

Silicon epitaxy below 200 C: Towards thin crystalline solar cells

Romain Cariou, R Ruggeri, P Chatterjee, J-L Gentner, P Roca i Cabarrocas

2012-10-10

Biblio references: Volume: 8470 Pages: 84700B

Origin: Thin Film Solar Technology IV

Radiation responses of Yb/Er-doped phosphosilicate optical fibers: hardening mechanisms related to Ce-codoping

M Vivona, Sébastien Girard, C Marcandella, E Pinsard, A Laurent, T Robin, B Cadier, M Cannas, A Boukenter, Y Ouerdane

2012-06-18

Biblio references:

Origin: X Symposium: SiO2-Advanced Dielectrics and Related Devices

Radiation hardening techniques for rare-earth-based optical fibers and amplifiers

Sylvain Girard, Marilena Vivona, Luciano Mescia, Arnaud Laurent, Youcef Ouerdane, Claude Marcandella, F Prudenzano, Aziz Boukenter, Thierry Robin, Benoît Cadier, Emmanuel Pinsard, Marco Cannas, Roberto Boscaino

2012-02-22

Biblio references: Volume: 8246 Pages: 82460Y

Origin: Free-Space Laser Communication Technologies XXIV

Study of the impact of growth and post-growth processes on the surface morphology of 4H silicon carbide films

Massimo Camarda, Andrea Canino, Patrick Fiorenza, Corrado Bongiorno, Andrea Severino, Vito Raineri, Antonino La Magna, Francesco La Via, Marco Mauceri, Giuseppe Abbondanza, Antonino Pecora, Danilo Crippa

2012-01-01

Biblio references: Volume: 717 Pages: 149-152

Origin: Materials Science Forum

Effects of different post-implantation annealing conditions on the electrical properties of interfaces to p-type implanted 4H-SiC

Alessia Frazzetto, Fabrizio Roccaforte, Filippo Giannazzo, R Lo Nigro, M Saggio, Edoardo Zanetti, Vito Raineri

2012-01-01

Biblio references: Volume: 717 Pages: 825-828

Origin: Materials Science Forum

Consideration on the thermal expansion of 3C-SiC epitaxial layer on Si substrates

Andrea Severino, Massimo Camarda, Antonino La Magna, Francesco La Via

2012-01-01

Biblio references: Volume: 711 Pages: 31-34

Origin: Materials Science Forum

Vertically oriented graphene flakes deposited during electric field assisted laser ablation of carbon targets in water

P Russo, M Sinatra, O Puglisi, G Compagnini, S Scalese

2012-01-01

Biblio references:

Origin: ANGEL 2012

Evolution of structural and electrical properties of Au/Ni contacts onto p-GaN after annealing

Giuseppe Greco, Fabrizio Roccaforte, R Lo Nigro, C Bongiorno, S Di Franco, P Prystawko, M Leszczyński, Vito Raineri

2012-01-01

Biblio references: Volume: 717 Pages: 1295-1298

Origin: Materials Science Forum

Formation of inorganic fullerene-like MoS2 nanostructures by laser ablation in water

M Sinatra, G Messina, G Compagnini, S Scalese

2012-01-01

Biblio references:

Origin: ANGEL 2012

Electrical characterisation of a-Si: H (n)/c-Si (p) heterostructures for solar cell applications

Silicon epitaxy below 200 C: Towards thin crystalline solar cells

Radiation responses of Yb/Er-doped phosphosilicate optical fibers: hardening mechanisms related to Ce-codoping

Radiation hardening techniques for rare-earth-based optical fibers and amplifiers

Study of the impact of growth and post-growth processes on the surface morphology of 4H silicon carbide films

Effects of different post-implantation annealing conditions on the electrical properties of interfaces to p-type implanted 4H-SiC

Consideration on the thermal expansion of 3C-SiC epitaxial layer on Si substrates

Vertically oriented graphene flakes deposited during electric field assisted laser ablation of carbon targets in water

Evolution of structural and electrical properties of Au/Ni contacts onto p-GaN after annealing

Formation of inorganic fullerene-like MoS2 nanostructures by laser ablation in water

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