2013 | Catania HQ

Ultra-flexible and brain-conformable micro-electrocorticography device with low impedance PEDOT-carbon nanotube coated microelectrodes

Elisa Castagnola, Luca Maiolo, Emma Maggiolini, Antonio Minotti, Marco Marrani, Francesco Maita, Alessandro Pecora, Gian N Angotzi, Alberto Ansaldo, Luciano Fadiga, Guglielmo Fortunato, Davide Ricci

2013-11-06

Biblio references: Pages: 927-930

Origin: 2013 6th International IEEE/EMBS Conference on Neural Engineering (NER)

Melt depth and time variations during pulsed laser thermal annealing with one and more pulses

M Hackenberg, Mathias Rommel, M Rumler, Jürgen Lorenz, Peter Pichler, K Huet, R Negru, G Fisicaro, A La Magna, N Taleb, M Quillec

2013-09-16

Biblio references: Pages: 214-217

Origin: 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)

Dopant dynamics and defects evolution in implanted silicon under laser irradiations: a coupled continuum and Kinetic Monte Carlo approach

G Fisicaro, L Pelaz, M Aboy, P López, M Italia, K Huet, F Cristiano, Z Essa, Q Yang, E Bedel-Pereira, M Hackenberg, P Pichler, M Quillec, N Taleb, A La Magna

2013-09-03

Biblio references: Pages: 33-36

Origin: 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Tailored Voltage deposition of µc-Si1-xCx: H from H2 diluted SiH4 and CH4 gas mixtures

Sofia Gaiaschi, R Ruggeri, EV Johnson, Marie-Estelle Gueunier-Farret, Christophe Longeaud, Pavel Bulkin, P Chapon, G Mannino, Jean-Paul Kleider

2013-08-18

Biblio references: Pages: nc

Origin: ICANS 25

Low-temperature SiGe PECVD epitaxy: From wafer equivalent to ultra-thin crystalline solar cells on inexpensive substrates

R Cariou, I Massiot, R Ruggeri, N Ramay, J Tang, A Cattoni, S Collin, J Nassar, P Roca i Cabarrocas

2013-06-16

Biblio references: Pages: 0921-0926

Origin: Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th

Structural and electrical characterization of microcrystalline silicon-carbon alloys deposited by RF-PECVD

Sofia Gaiaschi, R Ruggeri, EV Johnson, Pavel Bulkin, Marie-Estelle Gueunier-Farret, Christophe Longeaud, G Mannino, Jean-Paul Kleider, P Chapon

2013-05-27

Biblio references: Pages: nc

Origin: E-MRS Spring Meeting 2013

Microscopic model for the kinetics of the reset process in HfO 2 RRAM

A Kalantarian, G Bersuker, B Butcher, DC Gilmer, S Privitera, S Lombardo, R Geer, Y Nishi, P Kirsch, R Jammy

2013-04-22

Biblio references: Pages: 1-2

Origin: 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

Fast growth rate epitaxy by chloride precursors

Francesco La Via, Massimo Camarda, Andrea Canino, Andrea Severino, Antonino La Magna, Marco Mauceri, Carmelo Vecchio, Danilo Crippa

2013-01-01

Biblio references: Volume: 740 Pages: 167-172

Origin: Materials Science Forum

Potentialities of nickel oxide as dielectric for GaN and SiC devices

Raffaella Lo Nigro, Giuseppe Greco, L Swanson, G Fisichella, Patrick Fiorenza, Filippo Giannazzo, S Di Franco, C Bongiorno, A Marino, G Malandrino, Fabrizio Roccaforte

2013-01-01

Biblio references: Volume: 740 Pages: 777-780

Origin: Materials Science Forum

3C-SiC growth on (001) Si substrates by using a multilayer buffer

Andrea Canino, Andrea Severino, Nicolò Piluso, Francesco La Via, Stefania Privitera, Alessandra Alberti

2013-01-01

Biblio references: Volume: 740 Pages: 263-266

Origin: Materials Science Forum

Ultra-flexible and brain-conformable micro-electrocorticography device with low impedance PEDOT-carbon nanotube coated microelectrodes

Melt depth and time variations during pulsed laser thermal annealing with one and more pulses

Dopant dynamics and defects evolution in implanted silicon under laser irradiations: a coupled continuum and Kinetic Monte Carlo approach

Tailored Voltage deposition of µc-Si1-xCx: H from H2 diluted SiH4 and CH4 gas mixtures

Low-temperature SiGe PECVD epitaxy: From wafer equivalent to ultra-thin crystalline solar cells on inexpensive substrates

Structural and electrical characterization of microcrystalline silicon-carbon alloys deposited by RF-PECVD

Microscopic model for the kinetics of the reset process in HfO 2 RRAM

Fast growth rate epitaxy by chloride precursors

Potentialities of nickel oxide as dielectric for GaN and SiC devices

3C-SiC growth on (001) Si substrates by using a multilayer buffer

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