Owing to its superior electrical properties, such as a wide band gap (3.2 eV) and a high critical electric field (3MV/cm), Silicon Carbide (4H-SiC) is now considered the...
Power and High Frequencies Devices
Gallium Nitride (GaN) and its related AlxGa1-xN ternary alloys have excellent properties (like a wide band gap, a high critical electric field and a high electron saturation...
In the actual Power Devices market, 4H-SiC is the emerging material. The main limitations for an extensive application of this SiC polytype in many power applications are the cost of the material...
Graphene (Gr) has been widely investigated in the last years as channel material for high frequency electronics. However, the lack of a band gap in Gr band-structure hinders its application in...